鄭州大學(xué)信息工程學(xué)院導(dǎo)師：李常青 正文

　　姓 名：李常青 　性 別：男 　職 稱：副教授
　　電 話：0371-67781541 　電子郵件：
　　所在專業(yè)：電子信息 　通信地址：鄭州大學(xué)信息工程學(xué)院

　　1986年西安交通大學(xué) 真空電子器件專業(yè)畢業(yè) 工學(xué)學(xué)士
　　2000年 筑波大學(xué) 工學(xué)研究科 智能機(jī)能材料 工學(xué)碩士
　　2003年 筑波大學(xué) 工學(xué)研究科 智能機(jī)能材料 工學(xué)博士

　　科研課題
　　主持完成國家自然科學(xué)基金一項(xiàng)，2007-2009；
　　獲教育部留學(xué)回國人員資助一項(xiàng)，2005-2006；
　　實(shí)驗(yàn)室現(xiàn)有納米硅材料制作裝置，光譜分析及檢測系統(tǒng)等平臺(tái)。

　　主要論文
　　1. N. Fukata, C.Q.Li, T. Mukimura and K. Murakami; “Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation”, Appl. Phy. A,84 (2006) 395-401. SCI/EI
　　2. N. Fukata, C.Q.Li, T. Mukimura and K. Murakami; “Hydrogen Passivation of Er Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation”, MRS Symp. Pro, Grop-IVSemi Nanostructions, V832, (2005) 379-383. EI
　　3. T. Makimura, K. Kondo, C.Q.Li and K. Murakami; “Excitation of Er atoms by energy transfer from Si nanocrystallites embedded in SiO2 matrices fabricated by laser ablation”, Appl. Phys. A. 79 (2004) 799-802. SCI/EI
　　4. T. Makimura, K. Kondo, C.Q.Li and K. Murakami; “Optical excitation of Er ions with 1.5μm luminescence via the luminescent state in Si nanocrystallites embedded in SiO2 matrices”, Appl. Phys. Lett. 83 (2003) 5422-5424. SCI/EI
　　5. C.Q.Li, K. Kondo, T. Makimura and K. Murakami “Increase of 1.5μm luminescence from Cryogenic Temperature to Room Temperature from Er-doped SiO2 Films with Si Nanocrystallites Fabricated by Laser Ablation”, Jpn. J. Appl. Phys. Part A 6 (2003) 3424-3428. SCI/EI
　　6. C.Q.Li, K. Kondo, T. Makimura and K. Murakami “Fabrication of Er-doped Si nanocrystallites without Thermal Quenching of 1.5μm Photoluminescence”, Appl. Surf. Sci. 197-198 (2002) 607-609. SCI/EI
　　7. K. Murakami， C.Q.Li, K. Kondo andT. Makimura; "Er and P Impurity Doping in Si nanostructures Fabricated by laser Ablation", Proceedings of SPIE vol. 4636 (2002) 67-72. EI
　　8. K. Kondo, Y. Yamamoto, T. Mizuta, C.Q.Li, T. Makimura and K. Murakami "Phosphorus-doped Si nanocrystallites embedded in SiO2 films", Appl. Surf. Sci. 197-198 (2002) 670-673. SCI/EI
　　9. T. Makimura, C. Li, T. Mizuta and K. Murakami, “Fabrication of Materials from Ablation Plasma”, J. Plasma & Fusion Research 76 (2000) 1139-1144. (in Japanese).

　　國際會(huì)議：
　　1. C. Li, H. Uematsu, K. Kondo, T. Makimura and T. Makimura, “Excitation of Er Atoms by Energy transfer from Si Nanoparticles Embedded in SiO2 Matrices Fabricated by Laser Ablation”, The 7th International Conference on Laser Ablation (Hersonissos, Greece, 2003) PS59.
　　2. C. Li, T. Makimura, T. Shima, Y. Makita and K. Murakami, “1.5μm PL of Er-doped Silicon Nanoparticles Fabricated by Laser Ablation”, The 3rd NIMC International Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2000) pp. 152-153.
　　3. C. Li, K. Kondo, Y. Kawaguchi, T. Makimura and K. Murakami, “1.5μm Photoluminescence of Er-doped Silicon Nanocrystallites Fabricated by Laser Ablation”, The 4th NIMC International Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2001) pp. 260-261.
　　4. C. Li, K. Kondo, T. Makimura and K. Murakami, “Er-doped Si nanocrystallites without Thermal Quenching of 1.5μm Photoluminescence”, The 6th International Conference on Laser Ablation (Tsukuba, Japan, 2001) p. 126.
　　5. C. Li, K. Kondo, Y. Kawaguchi, T. Makimura and K. Murakami, “Bandgap Effect to Thermal Quenching of Photoluminescence at 1.5μm from Er-doped Si Nanocrystallites in SiO2 Matrices”, The 5th AIST International Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2002) pp. 194-195.
　　6. C. Li, K. Kondo, T. Makimura and K. Murakami, “Er-doped Si Nanocrystallites without Thermal Quenching of 1.5μm Photoluminescence”, International Symposium on Manipulation of Atoms and Molecules by Electronic Excitations (Tokyo, Japan, 2002) pp. 94-95.
　　7. K. Kondo, C. Li, T. Makimura and K. Murakami, “Fabrication of Er-doped Si nanocrystallites in SiO2 Matrices without Thermal Quenching of 1.5μ m PL”, The 5th AISTInternational Symposium on Photoreaction Control and Photofunctional Materials (Tsukuba, Japan, 2002) pp.196-197

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